| Price | Negotiation |
| MOQ | Negotiation |
| Delivery Time | Negotiation |
| Brand | Uchi |
| Place of Origin | Dongguan China |
| Certification | CE / RoHS / ISO9001 / UL |
| Model Number | MBR20150 |
| Packaging Details | Export package / Negotiation |
| Payment Terms | T/T |
| Supply Ability | 2000000 per month |
| Place of Origin | Dongguan China | Applications | High frequency switch Power supply |
| Packaging Details | Export package / Negotiation | Model Number | MBR20150 |
| Supply Ability | 2000000 per month | Certification | CE / RoHS / ISO9001 / UL |
| Brand Name | Uchi | Payment Terms | T/T |
| Package Type | Through Hole | Max. Forward Voltage | 0.9V, 0.9V |
| Type | Schottky Diode | Price | Negotiation |
| Delivery Time | Negotiation | Minimum Order Quantity | Negotiation |
| Features | RoHS product | Max. Forward Current | 30A, 30A |
Guard
Ring
For
Overvoltage
Protection
Schottky
Diode
With
RoHS
Advantage
SBD
has
the
advantages
of
high
switching
frequency
and
low
forward
voltage,
but
its
reverse
breakdown
voltage
is
relatively
low,
mostly
not
higher
than
60V,
and
the
highest
is
only
about
100V,
which
limits
its
application
range.
Such
as
freewheeling
diodes
of
power
switching
devices
in
switching
power
supply
(SMPS)
and
power
factor
correction
(PFC)
circuits,
high-frequency
rectifier
diodes
above
100V
for
transformer
secondary,
high-speed
diodes
of
600V~1.2kV
in
RCD
snubber
circuits,
and
For
600V
diodes
used
in
PFC
step-up,
only
fast
recovery
epitaxial
diodes
(FRED)
and
ultra-fast
recovery
diodes
(UFRD)
are
used.
The
reverse
recovery
time
Trr
of
UFRD
is
also
more
than
20ns,
which
cannot
meet
the
needs
of
1MHz~3MHz
SMPS
in
fields
such
as
space
stations.
Even
for
an
SMPS
with
hard
switching
at
100kHz,
due
to
the
large
conduction
loss
and
switching
loss
of
UFRD,
the
case
temperature
is
high,
and
a
large
heat
sink
is
required,
which
increases
the
size
and
weight
of
the
SMPS,
which
does
not
meet
the
miniaturization
and
thinning
requirements.
development
trend.
Therefore,
the
development
of
high-voltage
SBDs
above
100V
has
always
been
a
research
topic
and
a
focus
of
attention.
In
recent
years,
SBD
has
made
breakthrough
progress,
150V
and
200V
high-voltage
SBDs
have
been
listed,
and
the
SBD
of
more
than
1kV
made
of
new
materials
has
also
been
successfully
developed,
thus
injecting
new
vitality
and
vitality
into
its application.
Features
1.
Common
cathode
structure
2.
Low
power
loss,
high
efficiency
3.
High
Operating
Junction Temperature
4. Guard
ring
for
overvoltage protection,High
reliability
5.
RoHS
product
Applications
1. High frequency switch Power supply
2.
Free
wheeling
diodes,
Polarity
protection
applications
MAIN
CHARACTERISTICS
|
IF(AV) |
10(2×5)A |
|
VF(max) |
0.7V (@Tj=125°C) |
|
Tj |
175 °C |
|
VRRM |
100 V |
PRODUCT
MESSAGE
|
Model |
Marking |
Package |
|
MBR10100 |
MBR10100 |
TO-220C |
|
MBRF10100 |
MBRF10100 |
TO-220F |
|
MBR10100S |
MBR10100S |
TO-263 |
|
MBR10100R |
MBR10100R |
TO-252 |
|
MBR10100V |
MBR10100V |
TO-251 |
|
MBR10100C |
MBR10100C |
TO-220 |
ABSOLUTE
RATINGS
(Tc=25°C)
|
Parameter |
Symbol |
Value |
Unit |
||
|
Repetitive peak reverse voltage |
VRRM |
100 |
V |
||
|
Maximum DC blocking voltage |
VDC |
100 |
V |
||
|
Average forward current |
TC=150°C (TO-220/263/252 )TC=125°C(TO-220F) |
per device
per diode |
IF(AV) |
10 5 |
A |
|
Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod) |
IFSM |
120 |
A |
||
|
Maximum junction temperature |
Tj |
175 |
°C |
||
|
Storage temperature range |
TSTG |
-40~+150 |
°C |
||
