Price | Negotiation |
MOQ | 1 package |
Delivery Time | 3-5 work days |
Certification | Original Parts |
Model Number | H9HCNNNBUUMLHR |
Packaging Details | 10cm X 10cm X 5cm |
Payment Terms | T/T, PayPal, Western Union, Escrow and others |
Supply Ability | 6000pcs per month |
Speed | L | Packaging Details | 10cm X 10cm X 5cm |
Item number | H9HCNNNBUUMLHR | Model Number | H9HCNNNBUUMLHR |
Supply Ability | 6000pcs per month | Density | 16GB |
Certification | Original Parts | Org. | X16 |
Vol: | 1.8V-1.1V-1.1V | Payment Terms | T/T, PayPal, Western Union, Escrow and others |
Price | Negotiation | Delivery Time | 3-5 work days |
Minimum Order Quantity | 1 package | Package | BGA200 |
DRAM Memory Chip DRAM Memory Chip H9HCNNNBUUMLHR 16Gb LPDDR4 BGA200 Memory Chip Storage
Specifications
Features
·
VDD1
=
1.8V
(1.7V
to
1.95V)
·
VDD2,
VDDCA
and
VDDQ
=
1.1V
(1.06
to
1.17)
·
VSSQ
terminated
DQ
signals
(DQ,
DQS_t,
DQS_c,
DMI)
·
Single
data
rate
architecture
for
command
and
address;
-
all
control
and
address
latched
at
rising
edge
of
the
clock
·
Double
data
rate
architecture
for
data
Bus;
-
two
data
accesses
per
clock
cycle
·
Differential
clock
inputs
(CK_t,
CK_c)
·
Bi-directional
differential
data
strobe
(DQS_t,
DQS_c)
-
Source
synchronous
data
transaction
aligned
to
bi-directional
differential
data
strobe
(DQS_t,
DQS_c)
·
DMI
pin
support
for
write
data
masking
and
DBIdc
functionality
·
Programmable
RL
(Read
Latency)
and
WL
(Write
Latency)
·
Burst
length:
16
(default),
32
and
On-the-fly
-
On
the
fly
mode
is
enabled
by
MRS
·
Auto
refresh
and
self
refresh
supported
·
All
bank
auto
refresh
and
directed
per
bank
auto
refresh
supported
·
Auto
TCSR
(Temperature
Compensated
Self
Refresh)
·
PASR
(Partial
Array
Self
Refresh)
by
Bank
Mask
and
Segment
Mask
·
Background
ZQ
Calibration
Product Specifications
Part No. | Den. | Org. | Vol | Speed | Power | PKG | Product Status |
---|---|---|---|---|---|---|---|
H9HCNNNBUUMLHR | 16Gb | x16 | 1.8V-1.1V-1.1V | L | Low Power | 200 | Mass production |
H9HKNNNBTUMUAR | 16Gb | x16 | 1.8V-1.1V-1.1V | L | Low Power | 272 | Mass production |
H9HKNNNBTUMUBR | 16Gb | x16 | 1.8V-1.1V-1.1V | L | Low Power | 366 | Mass production |
H9HKNNNDGUMUAR | 24Gb | x16 | 1.8V-1.1V-1.1V | L | Low Power | 272 | Mass production |
H9HKNNNDGUMUBR | 24Gb | x16 | 1.8V-1.1V-1.1V | L / M | Low Power | 366 | Mass production |
H9HKNNNCTUMUAR | 32Gb | x16 | 1.8V-1.1V-1.1V | L | Low Power | 272 | Mass production |
H9HKNNNCTUMUBR | 32Gb | x16 | 1.8V-1.1V-1.1V | L / M | Low Power | 366 | Mass production |