|
Product
Attribute
|
Attribute
Value
|
|
Product
Category:
|
MOSFET
|
|
RoHS:
|
Details
|
|
Technology:
|
Si
|
|
Mounting
Style:
|
Through
Hole
|
|
Package
/
Case:
|
TO-247-3
|
|
Transistor
Polarity:
|
N-Channel
|
|
Number
of
Channels:
|
1
Channel
|
|
Vds
-
Drain-Source
Breakdown
Voltage:
|
500
V
|
|
Id
-
Continuous
Drain
Current:
|
40
A
|
|
Rds
On
-
Drain-Source
Resistance:
|
170
mOhms
|
|
Vgs
-
Gate-Source
Voltage:
|
20
V
|
|
Vgs
th
-
Gate-Source
Threshold
Voltage:
|
4.5
V
|
|
Qg
-
Gate
Charge:
|
320
nC
|
|
Minimum
Operating
Temperature:
|
-
55
C
|
|
Maximum
Operating
Temperature:
|
+
150
C
|
|
Pd
-
Power
Dissipation:
|
540
W
|
|
Channel
Mode:
|
Enhancement
|
|
Tradename:
|
Linear
L2
|
|
Packaging:
|
Tube
|
|
Configuration:
|
Single
|
|
Height:
|
21.46
mm
|
|
Length:
|
16.26
mm
|
|
Series:
|
IXTH40N50
|
|
Transistor
Type:
|
1
N-Channel
|
|
Type:
|
Linear
L2
Power
MOSFET
|
|
Width:
|
5.3
mm
|
|
Forward
Transconductance
-
Min:
|
11
S
|
|
Fall
Time:
|
44
ns
|
|
Product
Type:
|
MOSFET
|
|
Rise
Time:
|
133
ns
|
|
Factory
Pack
Quantity:
|
30
|
|
Subcategory:
|
MOSFETs
|
|
Typical
Turn-Off
Delay
Time:
|
127
ns
|
|
Typical
Turn-On
Delay
Time:
|
50
ns
|
|
Unit
Weight:
|
0.056438
oz
|
