| Price | Negotiable |
| MOQ | 1 |
| Delivery Time | 3 days |
| Brand | HAMAMATSU |
| Place of Origin | Japan |
| Model Number | S1337-16BQ |
| Packaging Details | piping |
| Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability | 2200 |
| Brand Name | HAMAMATSU | Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Junction capacitance (typical) | 65 pF | Dark current (Max.) | 50 pA |
| Rise time (typical value) | 0.2μs | Place of Origin | Japan |
| Delivery Time | 3 days | Minimum Order Quantity | 1 |
| Packaging Details | piping | Photosensitivity (typical value) | 0.5A /W |
| Model Number | S1337-16BQ | Supply Ability | 2200 |
Product Description:
S1337-16BQ Low Capacitance Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands
Features:
Receiving surface 5.9 × 1.1mm
Encapsulated ceramics
Package category --
Refrigeration uncooled type
Reverse voltage (Max.) 5 V
Spectral response range 190 to 1100 nm
Maximum sensitivity wavelength (typical value) 960 nm
Photosensitivity (typical value) 0.5A /W
Dark current (Max.) 50 pA
Rise time (typical value) 0.2μs
Junction capacitance (typical) 65 pF
Noise equivalent power (typical value) 1.0×10-14 W/Hz1/2
Typical values of measurement conditions Ta=25°C, photosensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated
Specifications:
| Spectral response range | 190 to 1100 nm |
| Maximum sensitivity wavelength (typical value) | 960 nm |
| Photosensitivity (typical value) | 0.5A /W |
| Dark current (Max.) | 50 pA |
