| Price | Negotiable |
| MOQ | 1 |
| Delivery Time | 3 days |
| Brand | HAMAMATSU |
| Place of Origin | Japan |
| Model Number | G12180-005A |
| Packaging Details | piping |
| Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability | 2200 |
| Brand Name | HAMAMATSU | Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Dark current (Max.) | 0.75 nA | Place of Origin | Japan |
| Delivery Time | 3 days | Minimum Order Quantity | 1 |
| Packaging Details | piping | Receiving surface | φ0.5mm |
| Number of pixels | 1 | Package | Metal |
| Model Number | G12180-005A | Supply Ability | 2200 |
Product Description:
G12180-005A InGaAs PIN Photodiode Receiving Surface: φ0.5mm
Features:
Receiving surface φ0.5mm
Number of pixels 1
Encapsulation metal
Package category TO-18
Heat dissipation uncooled type
Sensitivity wavelength range 0.9 to 1.7 μm
Maximum sensitivity wavelength (typical value) 1.55 μm
Photosensitivity (typical value) 1.1 A/W
Dark current (Max.) 0.75 nA
Cut-off frequency (typical value) 200 MHz
Junction capacitance (typical) 15 pF
Noise equivalent power (typical value) 7.0×10-15 W/Hz1/2
Typical value of measurement conditions Tc = 25°C, unless otherwise stated, sensitivity: λ = λp, dark current: VR = 5V, cutoff frequency: VR = 5V, RL = 50Ω, -3dB, junction capacitance: VR = 5V, f = 1MHz
Specifications:
| Package category | TO18 |
| Sensitivity wavelength range | 0.9 to 1.7 μm |
| Maximum sensitivity wavelength (typical value) | 1.55 μm |
| Photosensitivity (typical value) | 1.1 A/W |
