China S8553 Silicon Photodiode Vacuum Ultraviolet VUV Monitoring Photodiode for sale
China S8553 Silicon Photodiode Vacuum Ultraviolet VUV Monitoring Photodiode for sale
  1. China S8553 Silicon Photodiode Vacuum Ultraviolet VUV Monitoring Photodiode for sale
  2. China S8553 Silicon Photodiode Vacuum Ultraviolet VUV Monitoring Photodiode for sale
  3. China S8553 Silicon Photodiode Vacuum Ultraviolet VUV Monitoring Photodiode for sale
  4. China S8553 Silicon Photodiode Vacuum Ultraviolet VUV Monitoring Photodiode for sale
  5. China S8553 Silicon Photodiode Vacuum Ultraviolet VUV Monitoring Photodiode for sale

S8553 Silicon Photodiode Vacuum Ultraviolet VUV Monitoring Photodiode

Price Negotiable
MOQ 1
Delivery Time 3-5workingdays
Brand Hamamatsu
Place of Origin Japan
Model Number S8553
Packaging Details Standard Package
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram

Product Details

Product Specification

Brand Name Hamamatsu Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin Japan Delivery Time 3-5workingdays
Minimum Order Quantity 1 Packaging Details Standard Package
Model Number S8553

Product Description

S8553 Silicon Photodiode Vacuum Ultraviolet VUV Monitoring Photodiode

 

 

The S8553 has sensitivity in the vacuum ultraviolet region. It is particularly suitable for excimer laser (ArF: 193 nm, KrF: 248 nm) monitoring.
Its design optimized for use in the VUV region improves the stability of VUV light irradiation sensitivity compared to previous products.

Features
- Improved reliability of excimer laser (ArF: 193 nm, KrF: 248 nm)
- Large photosensitive area: 18 × 18 mm
- Windowless package: 25.5 × 25.5 mm ceramic package

 

Photosensitive area 18 × 18 mm
Package Ceramic
Package category Unsealed
Cooling Uncooled
Reverse voltage (max) 5 V
Spectral response range 190 to 1000 nm
Photosensitivity (typical) 0.06 air/W
Dark current (max) 5000 Pa
Rise time (typical) 18 μs
Terminal capacitance (typical)  8000 pF