China Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K High Sensitivity In The Near-infrared Band for sale
China Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K High Sensitivity In The Near-infrared Band for sale
  1. China Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K High Sensitivity In The Near-infrared Band for sale
  2. China Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K High Sensitivity In The Near-infrared Band for sale
  3. China Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K High Sensitivity In The Near-infrared Band for sale
  4. China Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K High Sensitivity In The Near-infrared Band for sale

Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K High Sensitivity In The Near-infrared Band

Price Negotiable
MOQ 1
Delivery Time 3-5work days
Place of Origin Japan
Model Number S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K
Packaging Details Paper box
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability 5000pcs

Product Details

Product Specification

encapsulation metal Package Category TO-5
Place of Origin Japan Packaging Details Paper box
Model Number S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K Supply Ability 5000pcs
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram Light-receiving side 3.6 × 3.6 mm
refrigeration Non-cooled Delivery Time 3-5work days
Minimum Order Quantity 1 Spectral response range 320 to 1100 nm
Reverse voltage (max) 30 V

Product Description

Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2683-18K High Sensitivity In The Near-infrared Band

 

Silicon photodiodes S2386-44K

Suitable for visible to near-infrared, universal photometer

Features
- High sensitivity in the near-infrared band
- Low dark current
- High reliability
- Excellent linearity

Dark current (max) 20 pA
Rise Time (Typical) 3.6 μs
Junction Capacitance (typical) 1600 pF
Noise equivalent power (typical) 1.4×10-15 W/Hz1/2

 

Silicon photodiodes S2386-5K

Suitable for visible to near-infrared, universal photometer

Features
- High sensitivity in the near-infrared band
- Low dark current
- High reliability
- Excellent linearity

 

Light-receiving side 2.4 × 2.4 mm
encapsulation metal
Package Category TO-5
refrigeration Non-cooled
Reverse voltage (max) 30 V
Spectral response range 320 to 1100 nm

 

Silicon photodiodes S2386-45K

Suitable for visible to near-infrared, universal photometer

Features
- High sensitivity in the near-infrared band
- Low dark current
- High reliability
- Excellent linearity

Light-receiving side 3.9 × 4.6 mm
encapsulation metal
Dark current (max) 30 pA
Rise Time (Typical) 5.5 μs
Junction Capacitance (typical) 2300 pF
Noise equivalent power (typical) 1.4×10-15 W/Hz1/2

 

Silicon photodiodes S2386-8K

Suitable for visible to near-infrared, universal photometer

Features
- High sensitivity in the near-infrared band
- Low dark current
- High reliability
- Excellent linearity

Light-receiving side 5.8 × 5.8 mm
encapsulation metal
Package Category TO-8
Reverse voltage (max) 30 V
Spectral response range 320 to 1100 nm
Dark current (max) 50pA

 

Silicon photodiodes S2386-18K

Suitable for visible to near-infrared, universal photometer

Features
- High sensitivity in the near-infrared band
- Low dark current
- High reliability
- Excellent linearity

 

Light-receiving side 1.1 × 1.1 mm
encapsulation metal
Package Category TO-18
Reverse voltage (max) 30 V
Spectral response range 320 to 1100 nm
Dark current (max) 2 pA