Price | Negotiable |
MOQ | 1 |
Delivery Time | 3-5work days |
Place of Origin | Japan |
Model Number | S16765-01MS |
Packaging Details | Paper box |
Payment Terms | L/C,D/A,D/P,T/T,Western Union,MoneyGram |
Supply Ability | 5000pcs |
Place of Origin | Japan | Number of Pixels | 1 |
Packaging Details | Paper box | Cooling Method | Non - cooled type |
Photosensitive Area | 2.8 × 2.4 mm | Model Number | S16765-01MS |
Supply Ability | 5000pcs | Payment Terms | L/C,D/A,D/P,T/T,Western Union,MoneyGram |
Rise Time (Typical Value) | 0.5 μs | Delivery Time | 3-5work days |
Price | Negotiable | Minimum Order Quantity | 1 |
Photosensitivity (Typical Value) | 0.4 A/W | Spectral Response Range | 320 - 1000 nm |
S16765-01MS Infrared Photoelectric Sensor
General Information:
Performance Parameters:
Features:
Photosensitive Area | 2.8 × 2.4 mm |
Number of Pixels | 1 |
Package | Plastic |
Cooling Method | Non - cooled type |
Spectral Response Range | 320 - 1000 nm |
Peak Sensitivity Wavelength (Typical Value) | 720 nm |
Photosensitivity (Typical Value) | 0.4 A/W |
Dark Current (Maximum Value) | 20 pA |
Rise Time (Typical Value) | 0.5 μs |
Junction Capacitance (Typical Value) | 200 pF |
Measurement Conditions |
Ta = 25°C, typical value.Photosensitivity: λ = λp. Dark current: VR = 1 V. Junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise specified. |