China S1336-44BQ Silicon Photodiode Pin Low capacitance UV To NIR For Precision Photometry for sale
China S1336-44BQ Silicon Photodiode Pin Low capacitance UV To NIR For Precision Photometry for sale
  1. China S1336-44BQ Silicon Photodiode Pin Low capacitance UV To NIR For Precision Photometry for sale
  2. China S1336-44BQ Silicon Photodiode Pin Low capacitance UV To NIR For Precision Photometry for sale

S1336-44BQ Silicon Photodiode Pin Low capacitance UV To NIR For Precision Photometry

Price Negotiable
MOQ 1
Delivery Time 3-5work days
Brand Hamamatsu
Place of Origin Japan
Model Number S1336-44BQ
Packaging Details Tube
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability 1000pcs/Month

Product Details

Product Specification

encapsulation Metal Place of Origin Japan
Sensitive area 3.6 × 3.6mm Packaging Details Tube
Number of pixels 1 Model Number S1336-44BQ
Supply Ability 1000pcs/Month Brand Name Hamamatsu
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram Delivery Time 3-5work days
Price Negotiable Minimum Order Quantity 1
Encapsulation type TO-5 Refrigeration and Non - cooled
Reverse voltage (maximum) 5V

Product Description

Product Description:

S1336-44BQ Silicon Photodiode Pin Low capacitance UV To NIR For Precision Photometry

 

Features:

High sensitivity in the ULTRAVIOLET band

Low capacitance

High reliability

 

Specifications:

The spectral response range is 190 to 1100 nm
Peak sensitivity wavelength (typical value) 960 nm
Sensitivity (typical value) 0.5A/W
Dark current (Max.) 50 pA
Rise time (typical value.) 0.5 mu s
Junction capacitance (typical value) 150 pF

 

Spectral response: